156 citations · 432 across the 5 of their papers we have counts for
5 papers
Metamorphic InAs/InGaAs QWs with electron mobilities exceeding
A. Benali, P. Rajak, R. Ciancio +3
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in th…
Broad diversity of near-infrared single-photon emitters in silicon
A. Durand, Y. Baron, W. Redjem +11
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon i…
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig +15
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…
Hyperuniform monocrystalline structures by spinodal solid-state dewetting
Marco Salvalaglio, Mohammed Bouabdellaoui, Monica Bollani +8
Materials featuring anomalous suppression of density fluctuations over large length scales are emerging systems known as disordered hyperuniform. The underlying hidden order render…
Optical properties of an ensemble of G-centers in silicon
C. Beaufils, W. Redjem, E. Rousseau +10
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion…