78 citations · 173 across the 12 of their papers we have counts for
12 papers
Dislocation-loop formation is a first-order phase transition
Xiaoya Chang, Arsalan Hashemi, Nima Ghafari Cherati +3
Dislocation loops are the elementary product of radiation damage in crystals, limiting reactor-component lifetimes, power-electronics reliability and the coherence of solid-state q…
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride
Nasrin Estaji, Ismaeil Abdolhosseini Sarsari, Gergő Thiering +1
Boron nitride is a layered crystal whose properties depend on how its atomic sheets are stacked. Its negatively charged boron vacancy is a well-established magnetic defect that can…
Magneto-optical properties of the neutral silicon-vacancy center in diamond under extreme isotropic strain fields
Meysam Mohseni, Gergő Thiering, Adam Gali
The neutral silicon--vacancy (SiV) center in diamond combines inversion symmetry with optical emission, making it a robust quantum emitter resilient to stray electric fields.…
Exe.py: Ab initio fine structure parameters for trigonal defect qubits within the Ee Jahn-Teller case
Balazs Toth, Adam Gali, Gergo Thiering
Trigonal solid-state defects are often subjects of spontaneous symmetry breaking driven by the Jahn-Teller effect, reflecting strong electron-phonon coupling. These sy…
Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes
Nasrin Estaji, Ismaeil Abdolhosseini Sarsari, Gergő Thiering +1
Two-dimensional (2D) materials hosting color centers and spin defects are emerging as key platforms for quantum technologies. However, the impact of reduced dimensionality on the s…
Theory of optical spin polarization of axial divacancy and nitrogen-vacancy defects in 4H-SiC
Guodong Bian, Gergő Thiering, Ádám Gali
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature q…
Magneto-optical properties of Group-IV--vacancy centers in diamond upon hydrostatic pressure
Meysam Mohseni, Lukas Razinkovas, Vytautas Žalandauskas +2
In recent years, the negatively charged group-IV--vacancy defects in diamond, labeled as G4V(-) or G4V centers, have attracted significant attention in quantum information processi…
Optical lineshapes for orbital singlet to doublet transitions in a dynamical Jahn-Teller system: the NiV center in diamond
Rokas Silkinis, Vytautas Žalandauskas, Gergő Thiering +4
We apply density functional theory to investigate interactions between electronic and vibrational states in crystal defects with multi-mode dynamical Jahn-Teller (JT) systems. Our…
Nuclear spin relaxation in solid state defect quantum bits via electron-phonon coupling in their optical excited state
Gergő Thiering, Adam Gali
Optically accessible solid state defect spins serve as a primary platform for quantum information processing, where precise control of the electron spin and ancillary nuclear spins…
Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states
Zi-Huai Zhang, Paul Stevenson, Gergo Thiering +7
Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However…
Thermal evolution of silicon carbide electronic bands
E. Cannuccia, A. Gali
Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular. However, this fundamental pr…
Quantum well stabilized point defect spin qubits
Ivády, J. Davidsson, N. Delegan +10
Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by…