Spin decontamination for magnetic dipolar coupling calculations: Application to high-spin molecules and solid-state spin qubits
arXiv:1909.13577 · doi:10.1103/PhysRevResearch.2.022024
Abstract
An accurate description of the two-electron density, crucial for magnetic coupling in spin systems, provides in general a major challenge for density functional theory calculations. It affects, e.g., the calculated zero-field splitting (ZFS) energies of spin qubits in semiconductors that frequently deviate significantly from experiment. In the present work (i) we propose an efficient and robust strategy to correct for spin contamination in both extended periodic and finite-size systems, (ii) verify its accuracy using model high-spin molecules, and finally (iii) apply the methodology to calculate accurate ZFS of spin qubits (NV centers, divacancies) in diamond and silicon carbide. The approach is shown to reduce the dependence on the used exchange-correlation functional to a minimum.
References in corpus (21)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- The nitrogen-vacancy colour centre in diamond
- Experimental loophole-free violation of a Bell inequality using entangled electron spins separated by 1.3 km
- Nanometer scale quantum thermometry in a living cell
- Sensing electric fields using single diamond spins
- Coherent control of single spins in silicon carbide at room temperature
- Electronic properties and metrology of the diamond NV- center under pressure
- Polytype control of spin qubits in silicon carbide
- Scalable Architecture for a Room Temperature Solid-State Quantum Information Processor
- Quantum decoherence dynamics of divacancy spins in silicon carbide
- Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
- Nanomechanical sensing using spins in diamond
- Fourier Magnetic Imaging with Nanoscale Resolution and Compressed Sensing Speed-up using Electronic Spins in Diamond
- All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
- Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
- Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study
- Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
- Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies
- All-optical coherent population trapping with defect spin ensembles in silicon carbide
- Towards a room-temperature spin quantum bus in diamond via optical spin injection, transport and detection
Cited by in corpus (10)
- GPAW: An open Python package for electronic-structure calculations
- Stability and electronic structure of NV centers at dislocation cores in diamond
- Influence of (N,H)-terminated surfaces on stability, hyperfine structure, and zero-field splitting of NV centers in diamond
- Influence of extended defects on the formation energy, the hyperfine structure, and the zero-field splitting of NV centers in diamond
- Temperature dependent spin-phonon coupling of boron-vacancy centers in hexagonal boron nitride
- 14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
- Topological Defects in Semiconducting Carbon Nanotubes as Triplet Exciton Traps and Single-Photon Emitters
- First-principles computational methods for quantum defects in two-dimensional materials: A perspective
- Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates
- Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes