482 citations · 1.8k across the 21 of their papers we have counts for
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Five-second coherence of a single spin with single-shot readout in silicon carbide
Christopher P. Anderson, Elena O. Glen, Cyrus Zeledon +11
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot re…
Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide
A. Csóré, I. G. Ivanov, N. T. Son +1
Divacancy in its neutral charge state (VV) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC…
Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
A. Csóré, N. T. Son, A. Gali
The negatively charged silicon vacancy [V] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V defect possesses…
Dipolar spin relaxation of divacancy qubits in silicon carbide
Oscar Bulancea Lindvall, Nguyen Tien Son, Igor A. Abrikosov +1
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numero…