482 citations · 1.8k across the 21 of their papers we have counts for
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Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions
T. Astner, P. Koller, C. M. Gilardoni +6
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, sever…
Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni +5
Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In…
Broadband single-mode planar waveguides in monolithic 4H-SiC
Tom Bosma, Joop Hendriks, Misagh Ghezellou +3
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and com…