482 citations · 1.8k across the 21 of their papers we have counts for
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quant-ph2017★ 81 cited
Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
Charles F. de las Casas, David J. Christle, Jawad Ul Hassan +3
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scal…
cond-mat.mtrl-sci2017★ 112 cited
Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
Viktor Ivády, Joel Davidsson, Nguyen Tien Son +3
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous c…