Magneto-electronic properties of twisted bilayer graphene system
arXiv:1907.08858
Abstract
The generalized tight-binding model is developed to investigate the magneto-electronic properties in twisted bilayer graphene system. All the interlayer and intralayer atomic interactions are included in the Moire superlattice. The twisted bilayer graphene system is a zero-gap semiconductor with double-degenerate Dirac-cone structures, and saddle-point energy dispersions appearing at low energies for cases of small twisting angles. There exist rich and unique magnetic quantization phenomena, in which many Landau-level subgroups are induced due to specific Moire zone folding through modulating the various stacking angles. The Landau-level spectrum shows hybridized characteristics associated with the those in monolayer, and AA AB stackings. The complex relations among the different sublattices on the same and different graphene layers are explored in detail.
48 pages, 16 pages
References in corpus (6)
- Substrate-induced band gap opening in epitaxial graphene
- Approaching the Dirac point in high mobility multi-layer epitaxial graphene
- The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
- Spectro-microscopy of single and multi-layer graphene supported by a weakly interacting substrate
- Tunable Graphene System with Two Decoupled Monolayers
- Electronic Properties of Twisted Trilayer Graphene