Spin-helical Dirac states in graphene induced by polar-substrate surfaces with giant spin-orbit interaction: a new platform for spintronics
arXiv:1406.4795 · doi:10.1038/srep06900
Abstract
Spintronics, or spin electronics, is aimed at efficient control and manipulation of spin degrees of freedom in electron systems. To comply with demands of nowaday spintronics, the studies of electron systems hosting giant spin-orbit-split electron states have become one of the most important directions providing us with a basis for desirable spintronics devices. In construction of such devices, it is also tempting to involve graphene, which has attracted great attention because of its unique and remarkable electronic properties and was recognized as a viable replacement for silicon in electronics. In this case, a challenging goal is to make graphene Dirac states spin-polarized. Here, we report on absolutely new promising pathway to create spin-polarized Dirac states based on coupling of graphene and polar-substrate surface states with giant Rashba-type spin-splitting. We demonstrate how the spin-helical Dirac states are formed in graphene deposited on the surface of BiTeCl. This coupling induces spin separation of the originally spin-degenerate graphene states and results in fully helical in-plane spin polarization of the Dirac electrons.
arXiv comment5 pages, 3 figures
References in corpus (17)
- The electronic properties of graphene
- Spintronics: Fundamentals and applications
- Quantum Spin Hall Effect in Graphene
- Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system
- Spin-orbit gap of graphene: First-principles calculations
- Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
- Band-structure topologies of graphene: spin-orbit coupling effects from first principles
- Impurity induced spin-orbit coupling in graphene
- Rashba effect in the graphene/Ni(111) system
- Graphene for spintronics: giant Rashba splitting due to hybridization with Au
- Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides
- Giant ambipolar Rashba effect in a semiconductor: BiTeI
- Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors
- Surface and bulk Fermiology and band dispersion in non-centrosymmetric BiTeI
- Epitaxial Graphene Electronic Structure And Transport
- Rashba split surface states in BiTeBr
- Many-body effects on the Rashba-type spin splitting in bulk bismuth tellurohalides
Cited by in corpus (4)
- Symmetries of quantum transport with Rashba spin-orbit: Graphene spintronics
- Exfoliation of single layer BiTeI flakes
- Uniaxial Strain Induced Topological Phase Transition in Bismuth-Tellurohalide-Graphene Heterostructures
- Charge-spin interconversion in graphene-based systems from density functional theory