425 citations · 458 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2009★ 33 cited
Morphology of Graphene on SiC(000-1) Surfaces
Luxmi, P. J. Fisher, N. Srivastava +5
Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger ele…
cond-mat.mtrl-sci2008★ 425 cited
Epitaxial graphene transistors on SiC substrates
Jakub Kedzierski, Pei-Lan Hsu, Paul Healey +5
This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has…