Unconventional Strain-Dependent Conductance Oscillations in Pristine Phosphorene
arXiv:1907.03316 · doi:10.1039/C8CP01620H
Abstract
Phosphorene is a single elemental two-dimensional semiconductor that has quickly emerged as a high mobility material for transistors and optoelectronic devices. In addition, being a 2D material, it can sustain high levels of strain, enabling sensitive modification of its electronic properties. In this paper, we investigate the strain dependent electrical properties of phosphorene nanocrystals. Performing extensive calculations we determine electrical conductance as a function uniaxial as well as biaxial strain stimulus, and uncover a unique zone phase diagram. This enables us to uncover for the first time conductance oscillations in pristine phopshorene, by simple application of strain. We show that how such unconventional current-voltage behaviour is tuneable by the nature of strain, and how an additional gate voltage can modulate amplitude (peak to valley ratio) of the observed phenomena and its switching efficiency. Furthermore, we show that the switching is highly robust against doping and defects. Our detailed results present new leads for innovations in strain based gauging and high-frequency nanoelectronic switches of phosphorene.
arXiv comment9 pages, 8 figures
References in corpus (28)
- Two Dimensional Atomic Crystals
- Black phosphorus field-effect transistors
- Phosphorene: A New 2D Material with High Carrier Mobility
- Density functional method for nonequilibrium electron transport
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
- Strain-induced gap modification in black phosphorus
- Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
- Semiconducting layered blue phosphorus: A computational study
- Superior mechanical flexibility of phosphorene and few-layer black phosphorus
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
- Negative Poisson's Ratio in Single-Layer Black Phosphorus
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Phase coexistence and metal-insulator transition in few-layer phosphorene: A computational study
- Phosphorene nanoribbons, nanotubes and van der Waals multilayers
- Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
- Tuning of the electronic and optical properties of single layer black phosphorus by strain
- Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
- Modulation of electronic and mechanical properties of phosphorene through strain
- Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate
- Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2
- Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes
- Topological Protected Dirac Cones in Compressed Bulk Black Phosphorus
- Strain modulated band gap of edge passivated armchair graphene nanoribbons
- Strain induced band gap deformation of H/F passivated graphene and h-BN sheet
- Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon MOSFET