Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopy
arXiv:2006.00486 · doi:10.1088/2053-1583/ab81b0
Abstract
We demonstrate terahertz time-domain spectroscopy (THz-TDS) to be an accurate, rapid and scalable method to probe the interaction-induced Fermi velocity renormalization νF^* of charge carriers in graphene. This allows the quantitative extraction of all electrical parameters (DC conductivity σDC, carrier density n, and carrier mobility μ) of large-scale graphene films placed on arbitrary substrates via THz-TDS. Particularly relevant are substrates with low relative permittivity (< 5) such as polymeric films, where notable renormalization effects are observed even at relatively large carrier densities (> 10^12 cm-2, Fermi level > 0.1 eV). From an application point of view, the ability to rapidly and non-destructively quantify and map the electrical (σDC, n, μ) and electronic (νF^* ) properties of large-scale graphene on generic substrates is key to utilize this material in applications such as metrology, flexible electronics as well as to monitor graphene transfers using polymers as handling layers.
23 pages, 8 figures
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Fermi velocity engineering in graphene by substrate modification
- Interaction phenomena in graphene seen through quantum capacitance
- Quantum-critical relativistic magnetotransport in graphene
- Semiconducting-to-metallic photoconductivity crossover and temperature-dependent Drude weight in graphene