Gate-controlled supercurrent in epitaxial Al/InAs nanowires

Abstract

Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superconductor, which is created as a shell on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying $\simeq \pm$ 23V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study on the temperature and magnetic field dependencies of GCS suggests that hot electron injection alone cannot explain our experimental findings.

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• Surface superconductor-insulator transition induced by an electric field
• High orbital-moment Cooper pairs by crystalline symmetry breaking
• Surface superconductor-insulator transition: Reduction of the critical electric field by Hartree-Fock potential
• Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium
• Dynamics of Gate-Controlled Superconducting Dayem Bridges
• Multimode operation of a superconducting nanowire switch in the nanosecond regime
• Microwave dynamics of gated Al/InAs superconducting nanowires
• Microscopic mechanism of electric field-induced superconductivity suppression in metallic thin films
• Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions
• Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate