Microwave dynamics of gated Al/InAs superconducting nanowires
arXiv:2502.17970 · doi:10.1063/5.0267684
Abstract
Several experiments have recently reported on gate-tunable superconducting properties in metallic devices, holding promise for the realization of cryogenic switches, tunable resonators, and superconducting logic. In particular, the suppression of the critical current as a function of the gate voltage has been widely investigated. However, time-domain studies are discussed only in a few cases. In this paper, we present a microwave characterization of a gate-controlled Al-capped InAs nanowire embedded in a coplanar waveguide resonator. We observe a shift in the resonator frequency and an increase in its internal losses as a function of the gate voltage, which we relate to a change in the imaginary and real components of the nanowire impedance, respectively. We demonstrate that these changes are described by the Mattis-Bardeen model with an effective temperature. We further study the resonator response to fast gate signals and measure characteristic response times of the order of 40 ns, both in time-domain and parametric modulation experiments. Our study elucidates the impact of the gate on the complex impedance of the nanowire in the superconducting state, as well as its dynamic performance, providing a foundation for the design of gate-controlled superconducting devices.
References in corpus (19)
- Charge insensitive qubit design derived from the Cooper pair box
- Epitaxy of Semiconductor-Superconductor nanowires
- Efficient and robust analysis of complex scattering data under noise in microwave resonators
- Coherent manipulation of an Andreev spin qubit
- A superconducting switch actuated by injection of high energy electrons
- On the origin of the controversial electrostatic field effect in superconductors
- On the Role of Out-of-Equilibrium Phonons in Gated Superconducting Switches
- Local Temperatures Out of Equilibrium
- Gate-controlled supercurrent in epitaxial Al/InAs nanowires
- Gate-tunable kinetic inductance parametric amplifier
- Microwave response of a metallic superconductor subject to a high-voltage gate electrode
- Non-Markovian Effects of Two-Level Systems in a Niobium Coaxial Resonator with a Single-Photon Lifetime of 10 ms
- Gate control of superconducting current: Mechanisms, parameters and technological potential
- Electrothermal Model of Kinetic Inductance Detectors
- Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage
- Gate-Tunable Critical Current of the Three-Dimensional Niobium Nano-Bridge Josephson Junction
- Dynamics of Gate-Controlled Superconducting Dayem Bridges
- Gate-tunable Superconductivity in Hybrid InSb-Pb Nanowires
- Multimode operation of a superconducting nanowire switch in the nanosecond regime