Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage
arXiv:2304.07084 · doi:10.1063/5.0159750
Abstract
The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant.
19 pages, 3 figures. arXiv admin note: substantial text overlap with arXiv:2302.13734
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Cited by in corpus (7)
- Gate control of superconducting current: Mechanisms, parameters and technological potential
- Dirac surface states, multiorbital dimerization and superconductivity in Nb- and Ta-based A15 compounds
- Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium
- Dynamics of Gate-Controlled Superconducting Dayem Bridges
- Microwave dynamics of gated Al/InAs superconducting nanowires
- Microscopic mechanism of electric field-induced superconductivity suppression in metallic thin films
- Demonstration of high-impedance superconducting NbRe Dayem bridges