Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium
arXiv:2312.04268 · doi:10.1007/s12274-024-6576-7
Abstract
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.
arXiv comment14 pages, 4 figures
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Cited by in corpus (5)
- Gate control of superconducting current: Mechanisms, parameters and technological potential
- Dynamics of Gate-Controlled Superconducting Dayem Bridges
- Multimode operation of a superconducting nanowire switch in the nanosecond regime
- Superconductivity in amorphous and crystalline Re-Lu films
- Microscopic mechanism of electric field-induced superconductivity suppression in metallic thin films