Niobium Dayem nano-bridge Josephson field-effect transistors
arXiv:2004.09182 · doi:10.1063/5.0011304
Abstract
We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of K, and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors, and let to foresee the implementation of a superconducting digital logic based on Nb-FETs. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable \emph{half-wave} rectifier to be used either for superconducting electronics or for photon detection applications.
arXiv comment5 pages, 4figures
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