211 citations · 489 across the 7 of their papers we have counts for
7 papers
A Scalable Compact Model for the Static Drain Current of Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Oihana Txoperena +2
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induce…
Wafer-scale graphene field-effect transistor biosensor arrays with monolithic CMOS readout
Miika Soikkeli, Anton Murros, Arto Rantala +11
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detecti…
Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing
Sha Li, Zhenxing Wang, Bianca Robertz +14
A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistic…
A two-dimensional spin field-effect transistor
Wenjing Yan, Oihana Txoperena, Roger Llopis +3
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in s…
Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction
Saül Vélez, David Ciudad, Joshua Island +8
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional mate…
Impurity-assisted tunneling magnetoresistance under weak magnetic field
Oihana Txoperena, Yang Song, Lan Qing +4
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferrom…
How reliable are Hanle measurements in metals in a three-terminal geometry?
Oihana Txoperena, Marco Gobbi, Amilcar Bedoya-Pinto +4
We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behav…