211 citations · 567 across the 10 of their papers we have counts for
10 papers
A molecular-spin photovoltaic device
Xiangnan Sun, Saül Vélez, Ainhoa Atxabal +6
We fabricated a C60-based molecular spin photovoltaic device that integrated a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response c…
Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
D. Babich, J. Tranchant, C. Adda +13
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic cir…
Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes
Kaushik Bairagi, Sara Catalano, Francesco Calavalle +4
Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials an…
Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor
Kaushik Bairagi, Elisabetta Zuccatti, Francesco Calavalle +6
The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typicall…
Room-temperature operation of a molecular spin photovoltaic device on a transparent substrate
Kaushik Bairagi, David Garcia Romero, Francesco Calavalle +5
Incorporating multifunctionality along with the spin-related phenomenon in a single device is of great interest for the development of next generation spintronic devices. One of th…
Unveiling the mechanisms of the spin Hall effect in Ta
Edurne Sagasta, Yasutomo Omori, Saül Vélez +7
Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including…
A two-dimensional spin field-effect transistor
Wenjing Yan, Oihana Txoperena, Roger Llopis +3
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in s…
Frequency driven inversion of tunnel magnetoimpedance in magnetic tunnel junctions
Subir Parui, Mário Ribeiro, Ainhoa Atxabal +5
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-fr…
Modulation of Spin Accumulation by Nanoscale Confinement using Electromigration in a Metallic Lateral Spin Valve
Emmanouil Masourakis, Libe Arzubiaga, Goran Mihajlović +4
We study spin transport in lateral spin valves with constricted channels. Using electromigration, we modulate the spin accumulation by continuously varying the width of the non-mag…
Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy
Subir Parui, Ainhoa Atxabal, Mário Ribeiro +5
We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures belo…