211 citations · 567 across the 10 of their papers we have counts for
Showing 2016Show all
2 papers · 1 filter
cond-mat.mes-hall2016★ 211 cited
A two-dimensional spin field-effect transistor
Wenjing Yan, Oihana Txoperena, Roger Llopis +3
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in s…
cond-mat.mes-hall2016★ 12 cited
Frequency driven inversion of tunnel magnetoimpedance in magnetic tunnel junctions
Subir Parui, Mário Ribeiro, Ainhoa Atxabal +5
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-fr…