Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier

Abstract

We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurations of the source and drain of Ni. As a possibility, it seems to indicate the existence of a magnetic state at the Si/oxide interface. The average spin diffusion length obtained is of 650 nm approximately. Results are compared to the window of resistances that seems to exist between the tunnel barrier resistance and two threshold resistances but the spin transfer seems to work in the range and outside the two thresholds.

References in corpus (3)

• Coherent spin transport through a 350-micron-thick Silicon wafer
• Comment: "Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal / silicon dioxide contacts" [Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)]
• Semiconductors between spin-polarized source and drain

Cited by in corpus (2)

• Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly-doped silicon substrates
• Room temperature two terminal tunnel magnetoresistance in lateral graphene transistor