Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy
arXiv:1704.07006 · doi:10.1063/1.4983012
Abstract
We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Py layer on top of the Si channel was determined as a function of the Si doping concentration and Py layer thickness. For fixed Py thickness we observed an increase of the Gilbert damping parameter with decreasing resistivity of the Si channel. For a fixed Si doping concentration we measured an increasing Gilbert damping parameter for decreasing Py layer thickness. No increase of the Gilbert damping parameter was found Py/Si samples with an insulating interlayer. We attribute our observations to an enhanced spin injection into the low-resistivity Si by spin pumping.
15 pages, 3 Figures, 2 Tables (to appear Applied Physics Letters)
References in corpus (5)
- Electronic measurement and control of spin transport in Silicon
- Radiative damping in wave guide based FMR measured via analysis of perpendicular standing spin waves in sputtered Permalloy films
- An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
- Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
- Spin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interaction