74 citations · 179 across the 7 of their papers we have counts for
7 papers
Single-particle detection of a semiconductor-to-metal transition by scanning dielectric microscopy
Ruben Millan-Solsona, José A. Ruiz-Torres, Carlos Moya +5
Hybrid nanostructures that combine semiconducting and metallic components offer great potential for photothermal therapy, optoelectronics, and sensing, by integrating tunable optic…
Large-area synthesis of ferromagnetic FeGeTe/graphene van der Waals heterostructures with Curie temperature above room temperature
H. Lv, A. da Silva, A. I. Figueroa +14
Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devic…
Magnetic Order in 3D Topological Insulators -- Wishful Thinking or Gateway to Emergent Quantum Effects?
A. I. Figueroa, T. Hesjedal, N. -J. Steinke
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels bal…
Large-area van der Waals epitaxy and magnetic characterization of FeGeTe films on graphene
J. Marcelo J. Lopes, Dietmar Czubak, Eugenio Zallo +8
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic ap…
Control of spin-orbit torques by interface engineering in topological insulator heterostructures
Frédéric Bonell, Minori Goto, Guillaume Sauthier +6
(BiSb)Te topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit to…
Microscopic effects of Dy-doping in the topological insulator Bi2Te3
L. B. Duffy, N. -J. Steinke, J. A. Krieger +13
Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic p…
Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure
A. I. Figueroa, S. L. Zhang, A. A. Baker +7
We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500~Å) as a function of film thickness using polarization-dependent…