50 citations · 84 across the 6 of their papers we have counts for
6 papers
Orbital Hall conductivity and orbital diffusion length of Vanadium thin films by Hanle magnetoresistance
M. Xochitl Aguilar-Pujol, Isabel C. Arango, Eoin Dolan +4
In spintronics, the spin Hall effect has been widely used to generate and detect spin currents in materials with strong spin-orbit coupling such as Pt and Ta. Recently, its orbital…
Quantification of spin-charge interconversion in highly resistive sputtered BiSe with non-local spin valves
Isabel C. Arango, Won Young Choi, Van Tuong Pham +10
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion ef…
Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Diogo C. Vaz, Chia-Ching Lin, John J. Plombon +20
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potenti…
Spin-to-charge conversion by spin pumping in sputtered polycrystalline BiSe
Isabel C Arango, Alberto Anadón, Silvestre Novoa +9
Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic stat…
Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Inge Groen, Van Tuong Pham, Stefan Ilić +10
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such…
All-electrical spin-to-charge conversion in sputtered BiSe
Won Young Choi, Isabel C. Arango, Van Tuong Pham +14
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find mate…