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20222025
most citedVoltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

50 citations · 84 across the 6 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2025

Orbital Hall conductivity and orbital diffusion length of Vanadium thin films by Hanle magnetoresistance

M. Xochitl Aguilar-Pujol, Isabel C. Arango, Eoin Dolan +4

In spintronics, the spin Hall effect has been widely used to generate and detect spin currents in materials with strong spin-orbit coupling such as Pt and Ta. Recently, its orbital…

cond-mat.mes-hall2023★ 4 cited

Quantification of spin-charge interconversion in highly resistive sputtered BiSe with non-local spin valves

Isabel C. Arango, Won Young Choi, Van Tuong Pham +10

The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion ef…

cond-mat.mes-hall2023★ 50 cited

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Diogo C. Vaz, Chia-Ching Lin, John J. Plombon +20

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potenti…

cond-mat.mes-hall2022★ 9 cited

Emergence of large spin-charge interconversion at an oxidized Cu/W interface

Inge Groen, Van Tuong Pham, Stefan Ilić +10

Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such…

cond-mat.mes-hall2022★ 13 cited

All-electrical spin-to-charge conversion in sputtered BiSe

Won Young Choi, Isabel C. Arango, Van Tuong Pham +14

One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find mate…