Emergence of large spin-charge interconversion at an oxidized Cu/W interface
arXiv:2211.09250 · doi:10.1103/PhysRevB.107.184438
Abstract
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WO). We determine that the SCI occurs at the Cu/WO interface with a temperature-independent interfacial spin-loss conductance of 20 10 and an interfacial spin-charge conductivity 1610 at 10 K (830 at 300 K). This corresponds to an efficiency given by the inverse Edelstein length 0.76 nm at 10 K (0.4 nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface is a promising candidate for the magnetic readout in MESO logic devices.
11 pages, 3 figures, and Supplemental Material
References in corpus (4)
- Experimental Demonstration of the Co-existence of the Spin Hall and Rashba Effects in beta-Tantalum/Ferromagnet Bilayers
- Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities
- Spin-charge interconversion in KTaO two-dimensional electron gases
- Spin diffusion length of Permalloy using spin absorption in lateral spin valves