535 citations · 1k across the 12 of their papers we have counts for
12 papers
Quantification of spin-charge interconversion in highly resistive sputtered BiSe with non-local spin valves
Isabel C. Arango, Won Young Choi, Van Tuong Pham +10
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion ef…
Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Diogo C. Vaz, Chia-Ching Lin, John J. Plombon +20
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potenti…
Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Inge Groen, Van Tuong Pham, Stefan Ilić +10
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such…
All-electrical spin-to-charge conversion in sputtered BiSe
Won Young Choi, Isabel C. Arango, Van Tuong Pham +14
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find mate…
Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires
Francesco Calavalle, Manuel Suárez-Rodríguez, Beatriz Martín-García +10
Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have b…
Non-collinear and strongly asymmetric polar moments at back-gated SrTiO3 interfaces
Fryderyk Lyzwa, Yurii G. Pashkevich, Premysl Marsik +15
The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controllin…