Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Abstract

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO${}_3$ and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that upon the electrical switching of the BiFeO${}_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO${}_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.

16 pages, 5 figures and Supplementary Information

References in corpus (4)

• Weak ferromagnetism and magnetoelectric coupling in bismuth ferrite
• Real-space imaging of non-collinear antiferromagnetic order with a single spin magnetometer
• Disentangling spin, anomalous and planar Hall effects in ferromagnetic/heavy metal nanostructures
• All-electrical spin-to-charge conversion in sputtered Bi${}_x$Se${}_{1-x}$

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• Magnetodielectric Properties in Two Dimensional Magnetic Insulators
• Measuring the magnetic anisotropy of the spin Hall effect and spin relaxation length in nickel and permalloy via electrical spin injection
• Gate tunable spin-charge interconversion in a graphene/ReS${}_2$ heterostructure up to room temperature