Two-dimensional electron system at the magnetically tunable EuO/SrTiO interface
arXiv:1712.04891 · doi:10.1103/PhysRevMaterials.1.062001
Abstract
We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in-situ redox reaction between pure metallic Eu deposited at room temperature on the surface of SrTiO3, an innovative bottom-up approach that can be easily generalized to other functional oxides and scaled to applications. Additionally, we find that the resulting EuO capping layer can be tuned from paramagnetic to ferromagnetic, depending on the layer thickness. These results demonstrate that the simple, novel technique of creating 2DESs in oxides by deposition of elementary reducing agents [T. C. Rödel et al., Adv. Mater. 28, 1976 (2016)] can be extended to simultaneously produce an active, e.g. magnetic, capping layer enabling the realization and control of additional functionalities in such oxide-based 2DESs.
5 pages, 4 figures
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- Redox-controlled epitaxy and magnetism of oxide heterointerfaces: EuO/SrTiO
- Ferroelectric control of spin-polarized two-dimensional electron gas
- Tunable two-dimensional electron system at the (110) surface of SnO
- Quantum interference effects of out-of-plane confinement on two-dimensional electron systems in oxides
- Biaxial-stress driven tetragonal symmetry breaking in and high-temperature ferromagnetic semiconductor from half-metallic CrO2
- Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO Interfaces
- Orientation-dependent superconductivity and electronic structure of the rare-earth metal/KTaO3 interfaces