Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas

Abstract

Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlGaN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8 mT. The zero-field electron spin splitting energies extracted from the weak antilocalization measurements are found to scale linearly with the Fermi wavevector with an effective linear spin-orbit coupling parameter 5.5x10^{-13} eV m. The spin-orbit times extracted from our measurements varied from 0.74 to 8.24 ps within the carrier density range of this experiment.

16 pages, 4 figures

Cited by in corpus (5)

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• Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells
• Enhanced spin-orbit scattering length in narrow Al_xGa_{1-x}N/GaN wires
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