Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells

Abstract

The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the growth direction that has direct effect on a spin-splitting. The sign of structural inversion asymmetry (SIA) spin-orbit coupling coefficient depends on an internal electric field in the well that results in different signs for Ga-face and N-face III-Nitride structures. The effective linear coupling coefficient is always positive because of the Dresselhaus-type contribution that is a major one in quantum wells under consideration. The magnitude of the spin-splitting is comparable with that experimentally observed in III-Nitrides and III-V zinc-blende structures.

17 pages, 8 figures

References in corpus (9)

• Quantum Computation with Quantum Dots
• Non-ballistic spin field-effect transistor
• Anisotropic transport in the two-dimensional electron gas in the presence of spin-orbit coupling
• Conduction band spin splitting and negative magnetoresistance in ${\mathrm{A}}_3{\mathrm{B}}_5$ heterostructures
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Cited by in corpus (6)

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• Spin-orbit coupling in wurtzite quantum wells
• Modulated Rashba interaction in a quantum wire: Spin and charge dynamics
• Rashba field in GaN
• Spin current and electrical polarization in GaN double-barrier structures
• Spin transport in polarization induced two dimensional confinement of carriers in wedge shaped \textit{c}-GaN nanowalls