Rashba field in GaN
arXiv:1012.4999 · doi:10.1016/j.physb.2011.03.060
Abstract
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 Gauss, alpha_BIA < 4*10^-13 eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlGaN heterostructures originates from properties of the interface.
References in corpus (7)
- Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlGaN heterostructures
- Demonstration of Rashba spin splitting in GaN-based heterostructures
- Suppression of the D'yakonov-Perel' spin relaxation mechanism for all spin components in [111] zincblende quantum wells
- Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas
- Electron spin resonance on a 2-dimensional electron gas in a single AlAs quantum well
- Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells
- Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions
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- Spin-orbit coupling in wurtzite quantum wells
- Experimental determination of Rashba spin-orbit coupling in wurtzite -GaN:Si
- Analytical solution of narrow quantum rings with general Rashba and Dresselhaus spin-orbit couplings
- Spin-relaxation time in the impurity band of wurtzite semiconductors
- Non-adiabatic Berry phase for semiconductor heavy holes under the coexistence of Rashba and Dresselhaus spin-orbit interactions