activity
20102024
most citedEnhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

26 citations · 94 across the 11 of their papers we have counts for

collaborators

11 papers

physics.optics2024★ 1 cited

Hybrid electroluminescence device for on-demand single photon generation at room temperature

Aleksander Rodek, Mateusz Hajdel, Kacper Oreszczuk +6

Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quant…

physics.app-ph2022

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

K. Oreszczuk, J. Slawinska, A. Rodek +3

We demonstrate a novel electro-luminescence device in which GaN-based -LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are…

physics.optics2022

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Paweł Wolny, Henryk Turski, Grzegorz Muziol +6

InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) ha…

physics.app-ph2022★ 14 cited

Electrically pumped blue laser diodes with nanoporous bottom cladding

Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek +8

We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitax…

physics.app-ph2019★ 26 cited

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

Shyam Bharadwaj, Jeffrey Miller, Kevin Lee +6

Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in…

cond-mat.mes-hall2019★ 6 cited

Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells

Michał Jarema, Marta Gładysiewicz, Łukasz Janicki +5

In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electr…