3 papers
physics.app-ph2019
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
Shyam Bharadwaj, Jeffrey Miller, Kevin Lee +6
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in…
cond-mat.mes-hall2019
Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells
Michał Jarema, Marta Gładysiewicz, Łukasz Janicki +5
In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electr…
physics.app-ph2018
Highly efficient optical transition between excited states in wide InGaN quantum wells
Grzegorz Muziol, Henryk Turski, Marcin Siekacz +6
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet…