C. Skierbiszewski

activity

20102024

most citedEnhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

26 citations · 94 across the 11 of their papers we have counts for

collaborators

Showing 2015Show all

2 papers · 1 filter

cond-mat.mtrl-sci2015★ 18 cited

Comparison of the luminous efficiency of Ga- and N-polar In $_{x}$ Ga $_{1 - x}$ N/In $_{y}$ Ga $_{1 - y}$ N quantum wells grown by plasma-assisted molecular beam epitaxy

Sergio Fernández-Garrido, Jonas Lähnemann, Christian Hauswald +5

We investigate the luminescence of Ga- and N-polar In $_{x}$ Ga $_{1 - x}$ N/In $_{y}$ Ga $_{1 - y}$ N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN a…

cond-mat.mtrl-sci2015

Miscut dependent surface evolution in the process of N-polar GaN $(000 1 ˉ)$ growth under N-rich condition

Filip Krzyzewski, Magdalena A. Zaluska-Kotur, Henryk Turski +2

The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2…

Comparison of the luminous efficiency of Ga- and N-polar Inx​Ga1−x​N/Iny​Ga1−y​N quantum wells grown by plasma-assisted molecular beam epitaxy

Miscut dependent surface evolution in the process of N-polar GaN(0001ˉ) growth under N-rich condition

Comparison of the luminous efficiency of Ga- and N-polar In $_{x}$ Ga $_{1 - x}$ N/In $_{y}$ Ga $_{1 - y}$ N quantum wells grown by plasma-assisted molecular beam epitaxy

Miscut dependent surface evolution in the process of N-polar GaN $(000 1 ˉ)$ growth under N-rich condition