26 citations · 94 across the 11 of their papers we have counts for
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Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature
C. Chèze, F. Feix, J. Lähnemann +6
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…
Comparison of the luminous efficiency of Ga- and N-polar InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy
Sergio Fernández-Garrido, Jonas Lähnemann, Christian Hauswald +5
We investigate the luminescence of Ga- and N-polar InGaN/InGaN quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN a…
Miscut dependent surface evolution in the process of N-polar GaN growth under N-rich condition
Filip Krzyzewski, Magdalena A. Zaluska-Kotur, Henryk Turski +2
The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2…
Rashba field in GaN
A. Wolos, Z. Wilamowski, C. Skierbiszewski +4
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large differe…