37 citations · 50 across the 5 of their papers we have counts for
5 papers
The new insight into gallium nitride (GaN) melting under pressure
Sylwester Porowski, Bogdan Sadovyi, Stanislaw Gierlotka +5
Results solving the long standing puzzle regarding the phase diagram and the pressure evolution of the melting temperature Tm(P) of gallium nitride (GaN), the most promising semico…
Properties of metal-insulator transition and electron spin relaxation in GaN:Si
A. Wolos, Z. Wilamowski, M. Piersa +4
We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-…
Rashba field in GaN
A. Wolos, Z. Wilamowski, C. Skierbiszewski +4
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large differe…
Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +10
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, wh…
MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +5
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in si…