activity
20042014
most citedProperties of metal-insulator transition and electron spin relaxation in GaN:Si

37 citations · 50 across the 5 of their papers we have counts for

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Showing 2004Show all

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cond-mat.mtrl-sci2004★ 1 cited

Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies

B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +10

The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, wh…

cond-mat.mtrl-sci2004

MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +5

Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in si…