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cond-mat.mtrl-sci2010★ 37 cited
Properties of metal-insulator transition and electron spin relaxation in GaN:Si
A. Wolos, Z. Wilamowski, M. Piersa +4
We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-…
cond-mat.mtrl-sci2010★ 11 cited
Rashba field in GaN
A. Wolos, Z. Wilamowski, C. Skierbiszewski +4
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large differe…