Spin current and electrical polarization in GaN double-barrier structures

Abstract

Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.

13 pages, 6 figures

References in corpus (6)

• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
• Spin-dependent resonant tunneling in symmetrical double-barrier structure
• Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas
• Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells
• Wurtzite Effects on Spin Splitting of GaN/AlN Quantum Wells

Cited by in corpus (2)

• Interactions and thermoelectric effects in a parallel-coupled double quantum dot
• Torque and conventional spin-Hall currents in two-dimensional spin-orbit coupled systems: Universal relation and hyper-selection rule