Wurtzite Effects on Spin Splitting of GaN/AlN Quantum Wells

Abstract

A new mechanism (DeltaC1-DeltaC3 coupling) is accounted for the spin splitting of wurtzite GaN, which is originated from the intrinsic wurtzite effects (band folding and structure inversion asymmetry). The band-folding effect generates two conduction bands (DeltaC1 and DeltaC3), in which p-wave probability has tremendous change when kz approaches anti-crossing zone. The spin-splitting energy induced by the DeltaC1-DeltaC3 coupling and wurtzite structure inversion asymmetry is much larger than that evaluated by traditional Rashba or Dresselhaus effects. When we apply the coupling to GaN/AlN quantum wells, we find that the spin-splitting energy is sensitively controllable by an electric field. Based on the mechanism, we proposed a p-wave-enhanced spin-polarized field effect transistor, made of InxGa1-xN/InyAl1-yN, for spintronics application.

arXiv comment12 pages, 4 figures (total 16 pages)

References in corpus (1)

• Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells

Cited by in corpus (7)

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• Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas
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• Enhanced spin-orbit coupling in core/shell nanowires
• Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures
• Theory of Electric Dipole Spin Resonance in a Parabolic Quantum Well
• Spin current and electrical polarization in GaN double-barrier structures