A spin field effect transistor for low leakage current

Abstract

In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the ``off''-state, resulting in significant standby power dissipation. We can counter this effect of the magnetic field by engineering the Dresselhaus spin-orbit interaction in the channel with a backgate. For realistic device parameters, a nearly perfect cancellation is possible, which should result in a low leakage current.

To appear in Physica E. The revised version has additional material which addresses the issue of which way the contacts should be magnetized in a Spin Field Effect Transistor. This was neither addressed in the previous version, nor in the upcoming journal paper

References in corpus (4)

• Non-magnetic semiconductor spin transistor
• Can spintronic field effect transistors compete with their electronic counterparts?
• Phase coherent quantum mechanical spin tranport in a weakly disordered quasi one-dimensional channel
• Magnetoelectric subbands and eigenstates in the presence of Rashba and Drresselhaus spin orbit interactions in a quantum wire

Cited by in corpus (1)

• Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits