Spin injection into a ballistic semiconductor microstructure

Abstract

A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient $\gamma$ is suppressed by the Sharvin resistance of the semiconductor $r_N^{\ast }=(h/e^2)({\pi }^2/S_N)$, where $S_N$ is the Fermi-surface cross-section. It competes with the diffusion resistances of the ferromagnets $r_F$, and $\gamma \sim r_F/r_N^{\ast }\ll 1$ in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulae for the junction resistance and the spin-valve effect are presented.

5 pages, 2 column REVTeX. Explicit prescription relating the results of the ballistic and diffusive theories of spin injection is added. To this end, some notations are changed. Three references added, typos corrected

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Cited by in corpus (9)

• Spintronics: Fundamentals and applications
• Semiconductors between spin-polarized source and drain
• Transport equations for a two-dimensional electron gas with spin-orbit interaction
• Electron spin operation by electric fields: spin dynamics and spin injection
• Cu_{2}O as nonmagnetic semiconductor for spin transport in crystalline oxide electronics
• Unified description of ballistic and diffusive carrier transport in semiconductor structures
• Spin-polarized electron transport in ferromagnet/semiconductor heterostructures: Unification of ballistic and diffusive transport
• Restrictions on modeling spin injection by resistor networks
• Spin polarised quantised transport via one-dimensional nanowire-graphene contacts