Conductance modulation in spin field-efect transistors under finite bias voltages
arXiv:cond-mat/0403199 · doi:10.1103/PhysRevB.69.165304
Abstract
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only the gate-voltage controlled Rashba spin-orbit coupling but also depend on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.
7 pages, 3 figures, to appear in Physical Review B, (April, 2004)