Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films

Abstract

In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within the material, and thus may serve as an investigative tool for characterizing spin-mediated behavior. Here we present the first experimental proof of spin accumulation induced electro-thermal transport behavior in a Pd (1 nm)/Ni80Fe20 (25 nm)/MgO (1 nm)/p-Si (2 um) specimen. The spin accumulation originates from the spin-Hall effect. The spin accumulation changes the phononic thermal transport in p-Si causing the observed magneto-electro-thermal transport behavior. We also observe the inverted switching behavior in magnetoresistance measurement at low temperatures in contrast to magnetic characterization, which is attributed to the canted spin states in p-Si due to spin accumulation. The spin accumulation is elucidated by current dependent anomalous Hall resistance measurement, which shows a decrease as the electric current is increased. This result may open a new paradigm in the field of spin-mediated transport behavior in semiconductor and semiconductor spintronics.

25 pages, 5 main and 6 supplementary figures

References in corpus (5)

• Theory of spin Hall magnetoresistance
• Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers
• Spin Hall magnetoresistance in metallic bilayers
• Spin phonon interactions and magneto-thermal transport behavior in p-Si
• Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer

Cited by in corpus (9)

• Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers
• Large spin-Hall effect in Si at room temperature
• Spin phonon interactions and magneto-thermal transport behavior in p-Si
• Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si
• Flexoelectronic doping of the degenerate silicon and the correlated electron behavior
• Generation and detection of dissipationless spin current in MgO/Si bilayer
• Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si
• Giant enhancement in Rashba spin-Seebeck effect in NiFe/p-Si thin films
• Interlayer charge transfer from contact electrification in conducting micro and nanoscale thin film heterostructures