21 citations · 135 across the 21 of their papers we have counts for
21 papers
Evidence of length scale effect in contact electrification in conducting thin film heterostructures
Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha +2
Contact electrification between two conducting materials is expected to exhibit length scale effect because the screening effect will diminish in conductors as a function of materi…
Oscillatory Hall effect from magnetoelectronic coupling in flexoelectronic silicon
Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha +2
The magnetoelectronic coupling can be defined as cross-domain coupling between electronic and magnetic properties, where modulation in magnetic properties changes the electronic pr…
Evidence of magnetoelectronic electromagnon mediated transport in flexoelectronic heterostructures
Anand Katailiha, Paul C. Lou, Ravindra G. Bhardwaj +2
The superposition of atomic vibrations and flexoelectronic effect gives rise to a cross correlation between free charge carriers and temporal magnetic moment of phonons in conducti…
Topological phonons in an inhomogeneously strained silicon-6: Possible evidence of the high temperature spin superfluidity and the second sound of topological phonons
Anand Katailiha, Paul C. Lou, Ravindra G. Bhardwaj +2
The superposition of topological phonons and flexoelectronic charge separation in an inhomogeneously strain Si give rise to topological electronic magnetism of phonons. The topolog…
Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor
Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha +2
The spatially inhomogeneity in a magnetic crystal give rise to electric polarization, which is known as inhomogeneous magnetoelectric effect. Similarly, an inhomogeneous magnetoele…
Topological phonons in an inhomogeneously strained silicon-4: Large spin dependent thermoelectric response and thermal spin transfer torque due to topological electronic magnetism of phonons
Ravindra G Bhardwaj, Anand Katailiha, Paul C. Lou +2
The superposition of flexoelectronic doping and topological phonons give rise to topological electronic magnetism of phonon in an inhomogeneously strained Si in the bilayer structu…
Topological phonons in an inhomogeneously strained silicon-2: Evidence of spin-momentum locking
Anand Katailiha, Paul C. Lou, Ravindra G. Bhardwaj +2
In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in t…
Topological phonons in an inhomogeneously strained silicon-1: Evidence of long-distance spin transport and unidirectional magnetoresistance of phonons
Anand Katailiha, Ravindra G. Bhardwaj, Paul C. Lou +2
Transverse acoustic waves in an inhomogeneous medium are analogues to electromagnetic waves and will exhibit topological behavior due to the Berry gauge potential in the momentum s…
Flexoelectronic doping of the degenerate silicon and the correlated electron behavior
Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj +3
In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon…
Large Magnetic Moment in Flexoelectronic Silicon at Room Temperature
Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj +3
Time-dependent rotational electric polarizations have been proposed to generate temporally varying magnetic moments, for example, through a combination of ferroelectric polarizatio…
Experimental evidence of hidden spin polarization in silicon by using strain gradient
Paul C. Lou, W. P. Beyermann, Sandeep Kumar
The centrosymmetric materials with hidden spin polarization are considered to be the promising candidates for realization of energy efficient spintronics systems and devices. Howev…
Large spin-Hall effect in Si at room temperature
Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj +4
Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignifi…
Flexoelectric effect mediated spin-to-charge conversion at amorphous-Si thin film interfaces
Ravindra G Bhardwaj, Anand Katailiha, Paul C. Lou +2
Interfacial spin to charge conversion arises due to an electric potential perpendicular to the interface. The electric potential can be artificially induced, for example, using fer…
Giant enhancement in Rashba spin-Seebeck effect in NiFe/p-Si thin films
Ravindra G. Bhardwaj, Paul C Lou, Sandeep Kumar
The spin-Seebeck effect mediated thermoelectric energy conversion can provide efficient alternative to traditional thermoelectrics for waste heat recovery. To achieve this goal, ef…
Generation and detection of dissipationless spin current in MgO/Si bilayer
Paul C Lou, Sandeep Kumar
Spintronics is an analogue to electronics where spin of the electron rather than its charge is functionally controlled for devices. The generation and detection of spin current wit…
Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers
Ravindra G Bhardwaj, Paul C Lou, Sandeep Kumar
The development of spintronics and spin-caloritronics devices need efficient generation, detection and manipulation of spin current. The thermal spin current from spin-Seebeck effe…
Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si
Paul C Lou, Sandeep Kumar
Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothes…
Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si
Paul C Lou, Sandeep Kumar
The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhi…
Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer
Paul C Lou, Sandeep Kumar
In this work, we present an experimental study of spin mediated enhanced negative magnetoresistance in Ni80Fe20 (50 nm)/p-Si (350 nm) bilayer. The resistance measurement shows a re…
Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films
P. C. Lou, W. P. Beyermann, S. Kumar
In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin ac…
Spin phonon interactions and magneto-thermal transport behavior in p-Si
Paul Lou, Laura de Sousa Oliveira, Chi Tang +2
The spin-phonon interaction is the dominant process for spin relaxation in Si, and as thermal transport in Si is dominated by phonons, one would expect spin polarization to influen…