Evidence of length scale effect in contact electrification in conducting thin film heterostructures

Abstract

Contact electrification between two conducting materials is expected to exhibit length scale effect because the screening effect will diminish in conductors as a function of material dimensions. As a consequence, the interfacial charge accumulation will diffuse away from interface/surface to a critical penetration depth as a function of material dimension. This work experimentally demonstrates the length scale effect in a permalloy and degenerately doped p-Si heterostructure system due to the flexoelectricity mediated contact electrification. The contact electrification induced interlayer charge transfer is observed through the whole thickness in case of 400 nm thick p-Si samples. Whereas, the charge carrier diffuses to a depth of 51 nm from the interface in case of 2 um thick Si. The length scale effect also leads to metal-insulator transition in p-Si layers in both cases. These results present a new opportunity to tailor the physical properties in conducting materials using contact electrification.