19 citations · 51 across the 12 of their papers we have counts for
12 papers
Evidence of length scale effect in contact electrification in conducting thin film heterostructures
Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha +2
Contact electrification between two conducting materials is expected to exhibit length scale effect because the screening effect will diminish in conductors as a function of materi…
Oscillatory Hall effect from magnetoelectronic coupling in flexoelectronic silicon
Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha +2
The magnetoelectronic coupling can be defined as cross-domain coupling between electronic and magnetic properties, where modulation in magnetic properties changes the electronic pr…
Evidence of magnetoelectronic electromagnon mediated transport in flexoelectronic heterostructures
Anand Katailiha, Paul C. Lou, Ravindra G. Bhardwaj +2
The superposition of atomic vibrations and flexoelectronic effect gives rise to a cross correlation between free charge carriers and temporal magnetic moment of phonons in conducti…
Topological phonons in an inhomogeneously strained silicon-6: Possible evidence of the high temperature spin superfluidity and the second sound of topological phonons
Anand Katailiha, Paul C. Lou, Ravindra G. Bhardwaj +2
The superposition of topological phonons and flexoelectronic charge separation in an inhomogeneously strain Si give rise to topological electronic magnetism of phonons. The topolog…
Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor
Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha +2
The spatially inhomogeneity in a magnetic crystal give rise to electric polarization, which is known as inhomogeneous magnetoelectric effect. Similarly, an inhomogeneous magnetoele…
Topological phonons in an inhomogeneously strained silicon-4: Large spin dependent thermoelectric response and thermal spin transfer torque due to topological electronic magnetism of phonons
Ravindra G Bhardwaj, Anand Katailiha, Paul C. Lou +2
The superposition of flexoelectronic doping and topological phonons give rise to topological electronic magnetism of phonon in an inhomogeneously strained Si in the bilayer structu…
Topological phonons in an inhomogeneously strained silicon-2: Evidence of spin-momentum locking
Anand Katailiha, Paul C. Lou, Ravindra G. Bhardwaj +2
In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in t…
Topological phonons in an inhomogeneously strained silicon-1: Evidence of long-distance spin transport and unidirectional magnetoresistance of phonons
Anand Katailiha, Ravindra G. Bhardwaj, Paul C. Lou +2
Transverse acoustic waves in an inhomogeneous medium are analogues to electromagnetic waves and will exhibit topological behavior due to the Berry gauge potential in the momentum s…
Flexoelectronic doping of the degenerate silicon and the correlated electron behavior
Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj +3
In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon…
Large Magnetic Moment in Flexoelectronic Silicon at Room Temperature
Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj +3
Time-dependent rotational electric polarizations have been proposed to generate temporally varying magnetic moments, for example, through a combination of ferroelectric polarizatio…
Large spin-Hall effect in Si at room temperature
Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj +4
Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignifi…
Flexoelectric effect mediated spin-to-charge conversion at amorphous-Si thin film interfaces
Ravindra G Bhardwaj, Anand Katailiha, Paul C. Lou +2
Interfacial spin to charge conversion arises due to an electric potential perpendicular to the interface. The electric potential can be artificially induced, for example, using fer…