21 citations · 135 across the 21 of their papers we have counts for
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Topological phonons in an inhomogeneously strained silicon-6: Possible evidence of the high temperature spin superfluidity and the second sound of topological phonons
Anand Katailiha, Paul C. Lou, Ravindra G. Bhardwaj +2
The superposition of topological phonons and flexoelectronic charge separation in an inhomogeneously strain Si give rise to topological electronic magnetism of phonons. The topolog…
Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor
Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha +2
The spatially inhomogeneity in a magnetic crystal give rise to electric polarization, which is known as inhomogeneous magnetoelectric effect. Similarly, an inhomogeneous magnetoele…
Topological phonons in an inhomogeneously strained silicon-4: Large spin dependent thermoelectric response and thermal spin transfer torque due to topological electronic magnetism of phonons
Ravindra G Bhardwaj, Anand Katailiha, Paul C. Lou +2
The superposition of flexoelectronic doping and topological phonons give rise to topological electronic magnetism of phonon in an inhomogeneously strained Si in the bilayer structu…
Topological phonons in an inhomogeneously strained silicon-2: Evidence of spin-momentum locking
Anand Katailiha, Paul C. Lou, Ravindra G. Bhardwaj +2
In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in t…
Topological phonons in an inhomogeneously strained silicon-1: Evidence of long-distance spin transport and unidirectional magnetoresistance of phonons
Anand Katailiha, Ravindra G. Bhardwaj, Paul C. Lou +2
Transverse acoustic waves in an inhomogeneous medium are analogues to electromagnetic waves and will exhibit topological behavior due to the Berry gauge potential in the momentum s…
Flexoelectronic doping of the degenerate silicon and the correlated electron behavior
Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj +3
In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon…
Large Magnetic Moment in Flexoelectronic Silicon at Room Temperature
Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj +3
Time-dependent rotational electric polarizations have been proposed to generate temporally varying magnetic moments, for example, through a combination of ferroelectric polarizatio…