Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well
arXiv:0802.3756 · doi:10.1103/PhysRevLett.101.016805
Abstract
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.
arXiv comment4 pages, 4 figures
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Cited by in corpus (5)
- Nematic Valley Ordering in Quantum Hall Systems
- Well-width dependence of valley splitting in Si/SiGe quantum wells
- Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
- Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well
- Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II