140 citations · 266 across the 11 of their papers we have counts for
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cond-mat.mes-hall2013
Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
T. Obata, K. Takeda, J. Kamioka +6
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si chan…
cond-mat.mes-hall2013★ 1 cited
In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
Tasuku Chiba, Ryuichi Masutomi, Kentarou Sawano +2
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization.…