Renormalization of hole-hole interaction at decreasing Drude conductivity
arXiv:0705.3117 · doi:10.1103/PhysRevB.76.165314
Abstract
The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/InGaAs/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor in the conventional expression for the interaction correction.
6 pages, 5 figures
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Cited by in corpus (3)
- Low magnetic field anomaly of the Hall effect in disordered 2D systems: Interplay between weak localization and electron-electron interaction
- Disorder and temperature renormalization of interaction contribution to the conductivity in two-dimensional InGaAs electron systems
- Interaction correction to the conductivity of two-dimensional electron gas in InGaAs/InP quantum well structure with strong spin-orbit coupling